Method of making vertical diode structures

ABSTRACT

A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The diode opening is initially filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that is heavily doped with a first type dopant and a bottom portion that is lightly doped with a second type dopant. The top portion is bounded by the bottom portion so as not to contact the titanium silicide layer. For one embodiment of the vertical diode, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of application Ser. No.10/104,240, filed Mar. 22, 2002, which is a divisional of applicationSer. No. 09/505,953, filed on Feb. 16, 2000, which is a divisional ofapplication Ser. No. 09/150,317, filed on Sep. 9, 1998, now U.S. Pat.No. 6,194,746, which is a divisional of application Ser. No. 08/932,791,filed on Sep. 5, 1997, now U.S. Pat. No. 5,854,102, which is acontinuation of application Ser. No. 08/609,505, filed on Mar. 1, 1996,now abandoned, all of the foregoing being incorporated herein byreference.

BACKGROUND OF THE INVENTION

[0002] 1. The Field of the Invention

[0003] The present invention relates to vertical diodes and morespecifically to vertical diodes with low series resistance formed on asilicon wafer.

[0004] 2. The Relevant Technology

[0005] One of the common trends in the electronics industry is theminiaturization of electronic devices. This trend is especially true forelectronic devices operated through the use of semiconductor microchips.Microchips are commonly viewed as the brains of most electronic devices.In general, a microchip comprises a small silicon wafer upon which canbe built thousands of microscopic electronic devices that are integrallyconfigured to form electronic circuits. The circuits are interconnectedin a unique way to perform a desired function.

[0006] With the desire to decrease the size of electronic devices, it isalso necessary to decrease the size of the microchip and electronicdevices thereon. This movement has increased the number and complexityof circuits on a single microchip.

[0007] One common type of electronic device found on a microchip is adiode. A diode functions as a type of electrical gate or switch. Anideal diode will allow an electrical current to flow through the diodein one direction but will not allow an electrical current to flowthrough the diode in the opposite direction. In conventional diodes,however, a small amount of current flows in the opposite direction. Thisis referred to as current leakage.

[0008] Conventional diodes are typically formed from a silicon materialthat is modified through a doping process. Doping is a process in whichions are implanted within the silicon. There are two general types ofdopants: P-type dopants and N-type dopants. P-type dopants are materialsthat when implanted within the silicon produce regions referred to asholes. These holes can freely accept electrons. In contrast, N-typedopants are materials that when implanted within silicon produce extraelectrons. The extra electrons are not tightly bound and thus can easilytravel through the silicon. In general, a diode is formed when amaterial doped with a P-type dopant is connected to a material dopedwith an N-type dopant.

[0009] Conventional diodes are configured by positioning the twoopposing doped materials side by side on a microchip. This side by sidepositioning, however, uses a relatively large amount of surface space onthe microchip. As a result, larger microchips are required.

[0010] Furthermore, for a diode to operate, each side of the diode musthave an electrical connection that either brings electricity to or fromthe diode. The minimal size of each side of the diode is in part limitedin that each side must be large enough to accommodate an electricalconnection. Since conventional diodes have a side by side configurationwith each side requiring a separate electrical connection, the abilityto miniaturize such diodes is limited. In addition, the requirement ofhaving side by side electrical connections on a single diode increasesthe size and complexity of the microchip.

[0011] Attempts have been made to increase the efficiency and currentflow rate through a diode so as to speed up the microchip. In oneattempt to accomplish this end, one of the sides of the diode is heavilydoped and the other side of the diode is lightly doped. The lightlydoped side limited the current, and the heavily doped side increased thereverse bias leakage. Thus, such a configuration produces minimal gain.

[0012] Other attempts have been made to decrease the resistance in theabove discussed diode by increasing the dopant concentration on thelightly doped side of the diode. As the dopant concentration isincreased, however, current leakage in the diode increases. In turn, thecurrent leakage decreases the current efficiency and functioning of themicrochip.

BRIEF SUMMARY OF THE INVENTION

[0013] It is therefore an object of the present invention to provideimproved diodes and their method of manufacture.

[0014] Another object of the present invention is to provide improveddiodes that use a minimal amount of surface area on a microchip.

[0015] Still another object of the present invention is to provideimproved diodes that are easily connected to other electronic devices ofan integrated circuit.

[0016] Also another object of the present invention is to provideimproved diodes having improved current flow and efficiency.

[0017] It is another object of the present invention to provide improveddiodes having a heavily doped area and a lightly doped area with minimalresistance and current leakage.

[0018] Yet another object of the present invention is to provideimproved diodes that can be selectively sized.

[0019] Finally, another object of the present invention is to provideimproved diodes having a minimal cost.

[0020] These and other objects and features of the present inventionwill become more fully apparent from the following description andappended claims, or may be learned by the practice of the invention asset forth hereinafter.

[0021] In order to achieve the above objectives and in accordance withthe invention as claimed and broadly described herein, a vertical diodeis provided on a silicon wafer. The silicon wafer is doped with a firsttype of dopant and has an exposed surface. A vertical diodeincorporating features of the present invention is manufactured byinitially highly doping the exposed surface of the silicon wafer with asecond type of dopant to form an active region.

[0022] Next, the active region is covered by a refractory metal silicidelayer, preferably titanium silicide. The silicide layer has a relativelylow resistance and, thus, ultimately decreased the resistance throughthe vertical diode. An insulation layer, such as silicon dioxide, isthen formed over the refractory metal silicide layer. The insulationlayer is formed using conventional oxidation deposition processes. Aconventional masking and etching process is used to etch a diode trenchthrough the insulation layer so as to expose a portion of the refractorymetal silicide layer. The diode trench is defined by an interior surfacewhich contacts the refractory metal silicide layer.

[0023] The diode trench is next filled with amorphous silicon which isthen lightly doped with the second type of dopant. The amorphous siliconforms a silicon plug within the diode trench. The silicon plug has abottom portion contacting the refractory metal silicide layer and a topportion separated from the refractory metal silicide layer by the bottomportion.

[0024] The amorphous silicon is next heated to recrystallize theamorphous silicon into large grain polysilicon. The second portion ofthe silicon plug, now converted into polysilicon, is then heavily dopedwith the first type of dopant. The doping is performed by ionimplantation followed by a heat treatment, such as RTP, for activationof the dopant. Finally, a metal contact is secured to the top portion ofthe silicon plug to complete the vertical diode.

[0025] Since the diode has a vertical formation, use of the surface areaon the silicon microchip is minimized. Furthermore, as there is only oneconnection point on top of the diode, the diode is easier to connect toother elements and is easier to size.

[0026] In one alternative embodiment, a programmable resistor ispositioned between the metal contact and the top portion of the siliconplug. The programmable resistor comprises chalcogenide material andbarrier materials. One preferred barrier material is titanium nitride.The programmable resistor allows the diode to have memorycharacteristics.

[0027] In yet another alternative embodiment, a second refractory metalsilicide layer is formed on the interior surface of the diode trenchprior to deposition of the amorphous silicon. This second silicidelayer, which is preferably titanium silicide, is used to decrease theresistance through the lightly doped end of the inventive diode.

[0028] Formation of the second refractory metal silicide layer ispreferably accomplished by initially depositing a layer of sacrificialpolysilicon on the interior surface of the diode trench. A blanket layerof titanium or some other refractory metal is then deposited over thepolysilicon layer. Sintering is then used to form the two layers intotitanium silicide.

[0029] The present invention also discloses other embodiments of novelvertical diodes having low series resistance. For example, in oneembodiment the silicon wafer has an oxide layer with a hole etchedtherethrough to communicate with a silicon substrate. The siliconsubstrate is doped with a P-type dopant. The hole in the oxide layer isfilled with a polysilicon plug that is heavily doped with an N-typedopant. The resulting silicon wafer is heated to a temperaturesufficient to cause a portion of the dopants in the polysilicon plug todiffuse into the silicon substrate. As a result, a diode is formedhaving a junction located within the silicon substrate. If desired, aprogrammable resistor and metal contact can then be positioned on top ofthe polysilicon plug.

[0030] Finally, in yet another alternative embodiment, a vertical diodeis formed by initially lightly doping a silicon substrate with a P-typedopant to form an active region. An oxide layer is then deposited overthe silicon substrate. Holes are etched through the oxide layer down tothe active region in the silicon substrate. The entire silicon wafer isthen positioned within a reactor chamber where an epitaxial siliconlayer is grown at the bottom of the holes against the active region.Once the epitaxial silicon layer is grown, the remaining portion of theholes is filled with a polysilicon plug that is heavily doped with anN-type dopant. The silicon wafer is then exposed to an elevatedtemperature that causes a portion of the dopants in the polysilicon plugto diffuse into a top portion of the epitaxial silicon layer. As aresult, a diode is formed wherein the junction is positioned within theepitaxial silicon layer. As before, a programmable resistor and metalcontact can then be positioned on top of the polysilicon plug.

BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order that the manner in which the above-recited and otheradvantages and objects of the invention are obtained, a more particulardescription of the invention briefly described above will be rendered byreference to specific embodiments thereof which are illustrated in theappended drawings. Understanding that these drawings depict only typicalembodiments of the invention and are not therefore to be considered tobe limiting of its scope, the invention will be described and explainedwith additional specificity and detail through the use of theaccompanying drawings in which:

[0032]FIG. 1 is a cross-sectional elevation view of a silicon waferhaving an oxide layer covering a portion thereof;

[0033]FIG. 2 is a cross-sectional elevation view of the silicon wafer inFIG. 1 having an active region;

[0034]FIG. 2A is a cross-sectional elevation view of the silicon waferin FIG. 2 having a refractory metal deposited thereon so as to cover theactive region;

[0035]FIG. 2B is a cross-sectional elevation view of the silicon waferin FIG. 2A having the refractory metal partially removed and convertedto a silicide layer over the active region;

[0036]FIG. 3 is a cross-sectional elevation view of the silicon wafer inFIG. 2B having an insulation layer covering the silicide layer;

[0037]FIG. 4 is a cross-sectional elevation view of a plurality of diodetrenches extending through the insulation layer of FIG. 3 and to thesilicide layer;

[0038]FIG. 5 is a cross-sectional elevation view of the silicon wafer inFIG. 4 having amorphous silicon filling the diode trenches;

[0039]FIG. 6 is a cross-sectional elevation view of the silicon wafer inFIG. 5 having a planarized surface to form silicon plugs filling thediode trenches;

[0040]FIG. 7 is a cross-sectional elevation view of the silicon wafer inFIG. 6 wherein each of the silicon plugs comprises a top portion dopedwith a first type dopant and a bottom portion doped with a second typedopant;

[0041]FIG. 8 is a cross-sectional elevation view of the silicon wafer inFIG. 7 having a programmable resistor and a metal contact;

[0042]FIG. 8A is an enlarged side view of the programmable resistor inFIG. 8 and a diode combination;

[0043]FIG. 9 is a cross-sectional elevation view of the silicon wafer inFIG. 8A without the programmable resistor material;

[0044]FIG. 10 is a cross-sectional elevation view of the silicon wafershown in FIG. 6 having a polysilicon layer and a refractory metal layer;

[0045]FIG. 11 is a cross-sectional elevation view of the silicon waferin FIG. 10 wherein the polysilicon layer and the refractory metal layerare converted to a single silicide layer;

[0046]FIG. 12 is a cross-sectional elevation view of the silicon waferin FIG. 11 having a layer of amorphous silicon;

[0047]FIG. 13 is a cross-sectional elevation view of the silicon waferin FIG. 12 after planarization;

[0048]FIG. 14 is a cross-sectional elevation view of the silicon waferin FIG. 13 having an oxide layer and a photoresist layer each having achannel positioned therethrough to each of a plurality of silicon plugs,each of the silicon plugs having a top portion and a bottom portion;

[0049]FIG. 15 is a cross-sectional elevation view of the silicon waferin FIG. 14 having a programmable resistor and a metal contact;

[0050]FIG. 16 is a cross-sectional elevation view of the silicon waferin FIG. 14 having a metal deposited on each of the silicon plugs;

[0051]FIG. 17 is a cross-sectional elevation view of the silicon waferin FIG. 16 having a programmable resistor and metal contact and furthershowing a connection plug for delivering electricity to the inventivediodes;

[0052]FIG. 18 is a cross-sectional elevation view of an alternativeembodiment of a silicon wafer having an oxide layer and polysiliconlayer;

[0053]FIG. 19 is a cross-sectional elevation view of the silicon waferin FIG. 18 having an active region formed by dopants diffused from thepolysilicon layer;

[0054]FIG. 20 is a cross-sectional elevation view of another alternativeembodiment of a silicon wafer having a pair of active regions separatedby field oxide regions;

[0055]FIG. 21 is a top plan view of the silicon wafer shown in FIG. 20;

[0056]FIG. 22 is a cross-sectional elevation view of the silicon wafershown in FIG. 20 having an epitaxial silicon layer and a polysiliconlayer;

[0057]FIG. 22A is a cross-sectional elevation view of the silicon wafershown in FIG. 22 wherein the epitaxial silicon layer has been doped bydiffusion from the polysilicon layer;

[0058]FIG. 23 is a side cross-sectional elevation view of the siliconwafer in FIG. 22A showing the formation of a pair of adjacent diodes;

[0059]FIG. 24 is a top plan view of the silicon wafer in FIG. 23;

[0060]FIG. 25 is a cross-sectional elevation view of the silicon wafershown in FIG. 23 having a programmable resistor and metal contactpositioned at the top of each diode;

[0061]FIG. 25A is a cross-sectional elevation view of the silicon waferin FIG. 25 showing a strapping configuration over the diodes;

[0062]FIG. 26 is a cross-sectional elevation view of an alternativeembodiment of a silicon wafer having an active region;

[0063]FIG. 27 is a cross-sectional elevation view of the silicon waferin FIG. 26 having a doped polysilicon layer positioned thereon;

[0064]FIG. 28 is a cross-sectional elevation view of the silicon waferin FIG. 27 having a plurality of oppositely doped columns;

[0065]FIG. 29 is a cross-sectional elevation view of the silicon waferin FIG. 28 having an oxide layer covering the columns with contactsextending through the oxide layer down to the columns;

[0066]FIG. 30 is a cross-sectional elevation view of the silicon waferin FIG. 29 showing the inventive diodes having a strapping withprogrammable resistors shown as well;

[0067]FIG. 31 is a cross-sectional elevation view of a silicon waferhaving a metal deposited on doped polysilicon plugs; and

[0068]FIG. 32 is a cross-sectional elevation view of the silicon waferof FIG. 31 having a programmable resistor and metal contact.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0069] The present invention relates to improved vertical diodes andmethods for manufacturing such diodes on a silicon wafer. Depicted inFIG. 1 is a layered wafer 10 used in constructing one embodiment of avertical diode incorporating features of the present invention. Layeredwafer 10 comprises a conventional silicon wafer 12 overlaid by an oxidelayer 14. Silicon wafer 12 is doped with a first type dopant. As used inthe specification and appended claims, the terms “first type dopant” and“second type dopant” can each refer either to an N-type dopant or aP-type dopant. However, once a convention is selected for manufacturingof a diode, the convention must be maintained. That is, either all firsttype dopants must be N doped and all second type dopants P doped, or allfirst type dopants must be P doped and all second type dopants N doped.

[0070] Oxide layer 14 is shown as having a hole 16 formed therethroughto expose a contact surface 15 on wafer 12. Hole 16 can be formed usingany conventional masking and etching processes. As shown in FIG. 2, anactive region 18 is formed in wafer 12 by heavily doping wafer 12through contact surface 15 with a second type dopant.

[0071] Once active region 18 is obtained, a refractory metal silicidelayer 17, seen in FIG. 2B, is formed over active region 18. As depictedin FIG. 2A, refractory metal silicide layer 17 is formed by initiallydepositing a refractory metal layer 19 over layered wafer 10 so as tocontact and cover active region 18. Refractory metal layer 19 preferablyhas a thickness ranging from about 500 Angstroms to about 1000Angstroms. Deposition of refractory metal layer 19 may be accomplishedby sputtering, chemical vapor deposition, or most other process by whichsuch metals are deposited. Refractory metal layer 19 is preferablyformed of titanium (Ti), however, other refractory metals such astungsten (W), tantalum (Ta), cobalt (Co), and molybdenum (Mo) can alsobe used.

[0072] Next, rapid thermal processing (RTP) is used to sinter refractorymetal layer 19. The sintering step is performed in a nitrogen (N2) richenvironment at a temperature ranging from about 500° C. to about 650° C.For the formation of titanium silicide, the preferred exposure timeranges between about 10 seconds to about 20 seconds.

[0073] As a result of the sintering, the top or exposed portion ofrefractory metal layer 19 reacts with the surrounding nitrogen to form anitride, for example, TiN. In contrast, the portion of refractory metallayer 19 adjacent to active region 18 reacts with the silicon to formrefractory metal silicide layer 17 seen in FIG. 2B. The composition ofrefractory metal silicide layer 17 is dependent on the refractory metalused. Where Ti is used, refractory metal silicide layer 17 is TiSi2.Other silicides that can be formed include, by way of example, WSi2TaSi2, CoSi2, and MoSi2.

[0074] Next, layered wafer 10 is etched to remove the refractory metalnitride but leave refractory metal silicide layer 17. The resultingconfiguration, as shown in FIG. 2B, has refractory metal silicide layer17 both contacting and covering active region 18.

[0075] Once refractory metal silicide layer 17 is obtained, aninsulation layer 20 is formed over layered wafer 10 so as to coverrefractory metal silicide layer 17. Insulation layer 20 is preferablysilicon dioxide (SiO2) formed through a deposition oxidation process.Although most conventional deposition oxidation processes will work,high temperature, thermal oxidation processes are preferably not used.The use of high temperatures during oxidation can drive the dopant outof active region 18. Accordingly, it is preferred that the depositionoxidation process be performed at a temperature ranging from about 750°C. to about 900° C. Insulation layer 20 is next planarized by eitherchemical-mechanical polishing (CMP) or photoresist etchback, as shown inFIG. 3.

[0076] As depicted in FIG. 4, a diode trench 24 is next formed throughinsulation layer 20 using conventional masking and etching processes.Diode trench 24 extends through insulation layer 20 and accessesrefractory metal silicide layer 17 in contact with active region 18.Diode trench 24 is further defined by an interior surface 25 whichcomprises opposing sidewalls 26 formed from insulation layer 20 and afloor 28 formed from a portion of refractory metal silicide layer 17. Asshown in FIG. 4 and each of the other figures, a plurality of diodetrenches 24 and subsequent diode structures can simultaneously be made.Since each of the diode trenches and the diodes formed therein aresubstantially identical, however, reference will only be made to asingle structure.

[0077] As shown in FIG. 5, the next manufacturing step entails fillingeach diode trench 24 with amorphous silicon. The filling step isaccomplished by initially depositing an amorphous silicon layer 36 overlayer wafer 10, thereby simultaneously covering insulation layer 20 andeither substantially or completely filling each diode trench 24.Amorphous silicon layer 36 is preferably deposited using an open orclosed tube deposition process that simultaneously deposits and dopesamorphous silicon layer 36. Once amorphous silicon layer 36 isdeposited, the amorphous silicon is lightly doped with the same dopant(second type dopant) as active region 18.

[0078] In a preferred embodiment, chemical mechanical polishing is nextused to remove a portion of amorphous silicon layer 36 such thatinsulation layer 20 is exposed. As shown in FIG. 6, this step results inlayered wafer 10 having an exposed planarized surface 37. Furthermore,each diode trench 24 is left being filled with a silicon plug 38.Silicon plug 38 contacts refractory metal silicide layer 17 at floor 28and is bounded by insulation layer 20 at side walls 26. Chemicalmechanical polishing is the preferred method for removing amorphoussilicon layer 36 since it eliminates the need for masking.Alternatively, photoresist etchback can be used for partial removal ofamorphous silicon layer 36.

[0079] Amorphous silicon has a higher current leakage than eitherpolysilicon or epitaxial silicon. To minimize leakage, one embodiment ofthe preferred invention recrystallizes the amorphous silicon intosubstantially large grain polysilicon after the amorphous silicon isdeposited.

[0080] Amorphous silicon recrystallizes into large grains of polysiliconwhen it is exposed to elevated temperatures in a range between about550° C. to about 650° C. over a period of time. In general, the crystalgrain size increases as the exposure time increases at a constanttemperature. As the size of the grains increase, the surface area of thegrains decrease per unit volume. Accordingly, the number of boundarylayers between the grains also decrease per unit volume. As the grainboundaries decrease, the current leakage decreases. Time and energyrequired for recrystalization, however, increases manufacturing costs.

[0081] To optimize the above factors, the amorphous silicon ispreferably heated at a temperature ranging from about 450° C. to about550° C. with about 500° C. to about 530° C. being more preferred. Theamorphous silicon is preferably exposed to the above temperatures for aperiod of time ranging from about 18 hours to about 48 hours with about18 hours to about 30 hours being more preferred. As a result, theamorphous silicon is converted to a polysilicon preferably having anaverage grain size ranging from about 0.3 microns to about 0.8 micronswith about 0.4 microns to about 0.6 microns being more preferred.

[0082] In the preferred embodiment, the amorphous silicon is heated in ahydrogen rich environment. The hydrogen fills the dangling bonds at thegrain boundaries, thereby helping to anneal the grains together. Inturn, annealing of the grains helps to further decrease the currentleakage.

[0083] To further optimize the effect of increasing the size of thesilicon grains, it is also preferred to minimize the width, designatedby the letter “w” in FIG. 5, of diode trench 24. That is, by minimizingthe width “w” of diode trench 24, the number of grains needed to filldiode trench 24 is also decreased, thereby decreasing the number ofgrain boundaries. In part, however, the width “w” of diode trench 24 islimited by the required current needed to pass through the diode forprogramming. As a result, diode trench 24 preferably has a width in arange between about 0.3 microns to about 0.8 microns with about 0.4microns to about 0.6 microns being more preferred.

[0084] Formation of the large grain polysilicon is preferablyaccomplished directly after deposition of amorphous silicon layer 36but, as in an alterative process, can be performed afterchemical-mechanical polishing of amorphous silicon layer 36.

[0085] Once silicon plug 38 is formed and exposed as discussed above, aphotoresist layer 41 is positioned over planarized surface 37, as shownin FIG. 7. Photoresist layer 41 is patterned to independently exposesilicon plug 38. Ion implantation is then used to heavily dope a topportion 42 of silicon plug 38 with the first type dopant. Photoresistlayer 41 is then removed. As a result of the above step, silicon plug 38comprises top portion 42 which is separated from refractory metalsilicide layer 17 by a bottom portion 44. Bottom portion 44 isidentified as the portion of plug 38 that was not subjected to the ionimplantation of the first type of dopant. As such, bottom portion 44 isstill lightly doped with the second type of dopant.

[0086] After the ions from the first type of dopant have been implantedinto top portion 42 of silicon plug 38, the dopant must be activated. Inthe preferred embodiment, the dopant is activated using RTP. The RTPcycle preferably heats top portion 42 to a temperature in a rangebetween about 950° C. to about 1100° C., over a time period betweenabout 5 seconds to about 20 seconds. Other conventional annealingprocesses can also be used to activate the dopant.

[0087] In one embodiment incorporating features of the presentinvention, the inventive diode can be used as a memory device. In thisembodiment, as shown in FIG. 8, a programmable resistor 46 is nextpositioned over and in contact with top portion 42 of silicon plug 38.As used in the specification and appended claims, the term “programmableresistor” defines a plurality of alternatively stacked layers of memorymaterial, such as ovonic or chalcogenide, and barrier material, such astitanium nitride. In the preferred embodiment, there is a layer ofchalcogenide material surrounded by two to five layers of barriermaterial.

[0088] A metallization step forms a metal contact 48, as shown in FIG.8, in contact with programmable resistor 46 to form a vertical diode 50.Metal contact 48 is formed using the same steps as discussed above,namely, deposition, masking, and etching.

[0089]FIG. 8A discloses one embodiment of programmable resistor 46situated on a substrate 12 with a layer of carbon or titanium nitridelayer 47 superadjacent to substrate 12. Situated upon layer 12 is alayer 49 of SiN, and a layer 53 of chalcogenide material. Over layer 53is another layer 47 of carbon or titanium nitride, and upon that layer47 is another layer 49 of SiN. Finally, a metal layer 51 is situatedupon the top most layer 49 which is also composed of SiN. Metal layer 51also makes contact through a contact hole in lower layer 49 with topmost layer 47. Layer 53 also makes contact through a contact hole inlower layer 49 with lower layer 47.

[0090] In one alternative embodiment of the present inventive diode,programmable resistor 46 can be removed. In this embodiment, as shown inFIG. 9, metal contact 48 is secured directly to top portion 42 ofsilicon plug 38.

[0091] In yet another alternative embodiment, resistance through theinventive diode is decreased by lining diode trench 24 with a secondrefractory metal silicide layer. As disclosed above with regard tovertical diode 50, top portion 42 is heavily doped with the first typedopant. The use of a heavily doped top portion 42 of a diode, as opposedto a standard doping, increases the rate of current flow through thediode in the forward bias direction. As a result of having a heavilydoped top portion however, bottom portion 44 of the diode must belightly doped so as to limit current leakage in the reverse biasdirection. In general, a lighter doping will decrease the currentleakage. As the dosage decreases, however, the resistance alsoincreases. It is therefore desirable to design a structure thatdecreases the resistance through bottom portion 44 without increasingleakage.

[0092] As depicted in FIG. 10, after diode trench 24 is formed, aspreviously discussed with regard to FIG. 4, but before amorphous siliconlayer 36 is deposited, a sacrificial polysilicon layer 30 is depositedon layered wafer 10. Polysilicon layer 30 is deposited with good stepcoverage on interior surface 25 of diode trench 24. Deposition ofpolysilicon layer 30 is performed using conventional methods such assputtering or chemical vapor deposition. It is preferred thatpolysilicon layer 30 be deposited in a thickness ranging between about200 Angstroms to about 500 Angstroms.

[0093] As also shown in FIG. 10, once polysilicon layer 30 is deposited,a refractory metal layer 32 is subsequently deposited over polysiliconlayer 30. Refractory metal layer 32 preferably has a thickness rangingfrom about 500 Angstroms to about 1000 Angstroms. Deposition ofrefractory metal layer 32 may be accomplished by sputtering, chemicalvapor deposition, or most other process by which metals are deposited.Refractory metal layer 32 is preferably formed of titanium (Ti),however, other refractory metals such as tungsten (W), tantalum (Ta),cobalt (Co), and molybdenum (Mo) can also be used.

[0094] Next, polysilicon layer 30 and refractory metal layer 32 aresintered so as to react together and from a single refractory metalsilicide layer 34 as shown in FIG. 11. Refractory metal silicide layer34 has a relatively low contact resistance and is positioned so as toline interior surface 25 of diode trench 24. The composition ofrefractory metal silicide layer 34 is dependent on the refractory metalused. Where Ti is used, refractory metal silicide layer 34 is TiSi2.Other silicides that can be formed include, by way of example, WSi2TaSi2, CoSi2, and MoSi2.

[0095] The sintering step is performed at a temperature ranging fromabout 500° C. to about 700° C., and an exposure time ranging betweenabout 5 seconds to about 20 seconds. Conventional heat treatingprocesses, such as RTP, can be used for the sintering. In the preferredembodiment, however, the heating does not need to be performed in anitrogen rich atmosphere since planarization will be performed usingchemical mechanical polishing.

[0096] Once refractory metal silicide layer 34 is formed, amorphoussilicon layer 36 is deposited, as shown in FIG. 12, over refractorymetal silicide layer 34. Amorphous silicon layer 36 is deposited in thesame manner as discussed with regard to FIG. 5 and thus fills diodetrench 24. Using the same process steps as discussed with regard to FIG.6, chemical-mechanical polishing is used to remove the portion ofamorphous silicon layer 36 and refractory metal silicide layer 34 aboveplanarized surface 37 of insulation layer 20. The resultingconfiguration, as disclosed in FIG. 13, shows silicon plug 38 beinghoused within diode trench 24 and lined by refractory metal silicidelayer 34.

[0097] Using the same method as previously discussed, the amorphoussilicon used in amorphous silicon layer 36 and housed within diodetrench 24 is heated to form large grain polysilicon. The preferred sizeof diode trench 24 and the average diameter grain size of thepolysilicon are substantially as previously disclosed.

[0098] With portions of amorphous silicon layer 36 removed, a protectiveand insulative silicon layer 40 is deposited, as shown in FIG. 14, in ablanket over layered wafer 10 so as to span diode trench 24. Insulativesilicon layer 40 can be composed of either silicon dioxide or siliconnitride. Silicon layer 40 is preferably deposited in the same manner asdiscussed with insulation layer 20.

[0099] Shown positioned on top of silicon layer 40 is a photoresistlayer 41. Photoresist layer 41 is patterned to mask silicon layer 40 sothat conventional etching can be performed to produce a passageway 56that extends through silicon layer 40 and exposes silicon plug 38 withindiode trench 24. Passageway 56 preferably has a width smaller than thewidth of silicon plug 38 and is centrally aligned on silicon plug 38 soas not to expose or contact refractory metal silicide layer 34.

[0100] Silicon plug 38 is then heavily doped through passageway 56 withthe first type of dopant to form a top portion 52 of silicon plug 38, asshown in FIG. 14. Plug 38 is thus shown as comprising a “U” shapedbottom portion 54 being lightly doped with the second type of dopant.Top portion 52 is bounded within bottom portion 54 and is heavily dopedwith the first type of dopant. Top portion 52 is formed in the samemethod as discussed with respect to the formation of top portion 42 inFIG. 7. The difference between top portion 52 and top portion 42 is thattop portion 52 must be bounded by bottom portion 54 so as not to contactrefractory metal silicide layer 34.

[0101] Using substantially the same methods as discussed with regard toFIG. 8, a programmable resistor 46 is deposited over silicon layer 40and within passageway 56 so as to contact top portion 52 of silicon plug38. Finally, a metal contact 48 is positioned on programmable resistor46 to complete a vertical diode 58 incorporating features of the presentinvention. As previously discussed however, programmable resistor 46 canbe eliminated if desired so that metal contact 48 directly contacts topportion 52 of silicon plug 38.

[0102] By lining diode trench 24 with refractory metal silicide layer34, the area of lightly doped bottom portion 54 is minimized. In turn,minimizing bottom portion 54 decreases the resistance through diode 58.The resistance is further decreased by the fact that the current flowsthrough refractory metal silicide layer 34 which has an extremely highconductance and thus low resistance.

[0103] In yet another alternative embodiment, a Schotkky diode can beformed incorporating features of the present invention. In general, aSchotkky diode is formed by placing a metal in contact with a lightlydoped region. To accomplish this, rather than doping silicon plug 38 toform top portion 52, as discussed with regard to FIG. 14, a platinumsilicide (PtSi2) layer 60 is formed on the exposed surface of siliconplug 38, as shown in FIG. 16. Platinum silicide layer 60 is formed usingthe same methods as discussed in the formation of refractory metalsilicide layer 34. Namely, a layer of sacrificial polysilicon isdeposited over silicon plug 38. A layer of platinum is then depositedover the sacrificial polysilicon. Sintering is then used to form thePtSi2. In an alternative embodiment, other refractory metals, such asthose previously discussed with regard to refractory metal silicidelayer 34, can replace the platinum and thus form alternative silicides.

[0104] An aqua regia process is next used to remove the non-reactiveplatinum. As shown in FIG. 17, the diode can then be finished byselectively attaching a programmable resistor 46 and a metal contact 48as previously discussed.

[0105] As also shown in FIG. 17, to deliver a current to the abovedisclosed inventive diodes, a connection plug 62 is formed throughinsulation layer 20 so as to contact refractory metal silicide layer 17.Connection plug 62 is formed by initially etching a connection trench 64having an interior surface 65 through insulation layer 20. Connectiontrench 64 has substantially the same configuration as diode trench 24and is preferably formed at the same time and in the same manner asdiode trench 24. The formation of diode trench 24 is as discussed withregard to FIG. 4.

[0106] Next, a titanium layer 66 is deposited on interior surface 65 ofconnection trench 64. Titanium layer 66 is deposited in the same manner,as discussed with regard to FIG. 10, that refractory metal layer 32 isdeposited over polysilicon layer 30. In one embodiment, titanium layer66 is exposed to a nitrogen rich environment at an elevated temperatureto convert the titanium to titanium nitride (TiN). Next, connectiontrench is filled with tungsten (W), using a deposition process, to forma tungsten plug 68.

[0107] Finally, a metal contact 70, preferably made of aluminum, ispositioned to contact tungsten plug 68. In this configuration, anelectrical current delivered to metal contact 70, travels throughconnection trench 64 and along active region 18 where it enters each ofthe connected diodes.

[0108] The present invention also discloses other embodiments ofvertical diodes that minimize resistance and current leakage. Forexample, an additional embodiment of a vertical diode incorporatingfeatures of the present invention is disclosed in FIGS. 18 and 19. Asdisclosed in FIG. 18, a silicon substrate 80 of a silicon wafer 81 hasbeen overlaid by an oxide layer 82. Silicon substrate 80 is lightlydoped with a first type dopant that is preferably a P-type dopant.Alternatively, of course, silicon substrate 80 can be doped with anN-type dopant. A conventional masking and etching process has been usedto form a hole 84 through oxide layer 82 to expose a surface 86 ofsilicon substrate 80.

[0109] A polysilicon layer 85 has been deposited in a blanket layer oversilicon wafer 81 so as to fill hole 84. Polysilicon layer 85 isdeposited in an open or closed deposition tube so as to simultaneouslybe heavily doped with a second type dopant. As shown in FIG. 19, a CMPor other planarizing step has been used to remove the portion ofpolysilicon layer 85 above oxide layer 82. As a result, a silicon plug88 is formed within hole 84.

[0110] Next, silicon wafer 81 is heated to an elevated temperature,such, as by using an RTP or tube furnace step, so as to diffuse aportion of the doping ions from polysilicon plug 88 into siliconsubstrate 80, thereby forming an active region 90. The benefit conferredin doping by diffusion is that such doping allows for shallow junctionformation. Preferred process flow parameters for diffusion of the dopingions are a heat cycle of 30 minutes at 900° C. in an atmosphere ofgaseous diatomic nitrogen within a batch processing tube furnace. As aresult, a vertical diode 91 is formed having a junction 93 formed at theinterface of active region 90 and silicon substrate 80. If desired, aprogrammable resistor 87 and a metal contact 89 can be formed overpolysilicon plug 88 in substantially the same way that programmableresistor 46 and metal contact 48 are formed over silicon plug 38 in FIG.8.

[0111] In the above embodiment, junction 93 is formed within the singlecrystal structure of silicon substrate 80 and thus has relatively lowresistance and low current loss. One problem with this configuration,however, is that the dopants migrating from polysilicon plug 88 intosilicon substrate 80 migrate both vertically and laterally. Accordingly,as shown in FIG. 19, active region 90 has a larger diameter than hole84. This increase in size of active region 90 can create isolationproblems when attempting to densely compact a plurality of verticaldiodes 91 in a defined area. More specifically, if the adjacent diodesare formed too close together, a short can occur between adjacent activeregions 90 as a voltage is applied to the diodes. To prevent shorts, thediodes must be placed further apart, thereby decreasing their formationdensity.

[0112] To remedy this isolation problem, the present invention alsodiscloses inventive diode configurations that maximize compaction andminimize the possibility of shorting. The method for forming the belowalternative embodiment of an inventive diode is discussed as part of anintegrated system for simultaneously forming a plurality of memorycapable diodes that have low series resistance. It is submitted,however, that those skilled in the art would be able to use the presentdisclosure to construct and use the diode portion of the system in anyenvironment where a diode is needed.

[0113] As shown in FIG. 20, the first step in formation of the inventivediode is to use a local oxidation of silicon (LOCOS) process to grow aseries of field oxide regions 92 on a silicon substrate 94 of a siliconwafer 95. Silicon substrate 94 was initially doped with an N-type dopantand has a series of exposed surfaces 96 positioned between each adjacentfield oxide region 92. Next, each exposed surface 96 is lightly doped byion implantation with P-type dopants to form active regions 98. Theconfiguration shown in FIG. 20 in which two active regions 98 and threeoxide lines 92 are shown is simply illustrative. In practice, any numberof active regions 98 and oxide lines 92 can simultaneously be formed onsilicon wafer 95.

[0114]FIG. 21 is a top view of a section of silicon wafer 95 showing theelements described above in FIG. 20. As shown in FIG. 21, oxide lines 92and active regions 98 each have a length extending along the surface ofsilicon wafer 95. As will be discussed later in greater detail, activeregions 98 act as digit lines that communicate with discrete diodesformed on active region 98. Once all of active regions 98 are doped,alternating portions of active region lines 98 are heavily doped with aP-type dopant. This is accomplished by using a layer of photoresist toinitially cover active regions 98. A conventional masking and etchingprocess is then used to expose those portion of active regions 98 thatare to be heavily doped. Ion implantation is then used to dope theexposed areas. With the layer of photoresist removed, FIG. 21 showsactive regions 98 as comprising alternating P plus active regions 100and P minus active regions 102.

[0115]FIG. 22 is a cross-sectional view of silicon wafer 95 taken acrossP minus active region 102. As shown therein, a blanket oxide layer 104has been deposited over silicon wafer 95. As used in the specificationand appended claims, the term “oxide layer” is interpreted to include alayer made out of any insulative silicon material, e.g. siliconmonoxide, silicon dioxide, and silicon nitride. Chemical mechanicalpolishing (CMP) or some other equivalent process has also been used toplanarize oxide layer 104 so as to form a smooth top surface 106.Deposited on top of top surface 106 is a silicon nitride layer 108 thatcan also be subjected to a CMP process. As will be discussed later,silicon nitride layer 108 functions as an etch stop for laterprocessing.

[0116] A conventional masking and etching process has next been used toform holes 110 that extend through silicon nitride layer 108, oxidelayer 104, and exposed surface 96 of P minus active regions 102. Withholes 110 formed, silicon wafer 95 is positioned in a reactor chamberand an epitaxial silicon layer 112 is grown exclusively on exposedsurface 96 of P minus active regions 102. Epitaxial silicon layer 112 islightly doped during growth with a P-type dopant. The growing ofepitaxial silicon is both a time consuming and expensive process. Assuch, it is preferable to minimize the thickness of epitaxial siliconlayer 112 so as to minimize the amount of epitaxial silicon that needsto be grown. As discussed in greater detail below, however, epitaxialsilicon layer 112 must be sufficiently thick to enable the formation ofa junction for the inventive diode. As such, it is preferable thatepitaxial silicon layer 112 have a thickness in a range between about1500 Angstroms to about 3000 Angstroms, with about 2000 Angstroms toabout 2500 Angstroms being more preferred. Methods for forming epitaxialsilicon layer 112 are known in the art, but a preferred method for theforming is at a temperature of 950-1200° C. in an atmosphere of silane,SiH2Cl2, or disilane, and the deposition method is LPCVD at 1000Angstroms per minute. Alternatively, atmospheric pressure deposition canalso be employed.

[0117] Next, a polysilicon layer 111 has been deposited over siliconwafer 95 so as to fill the remaining portion of each hole 110.Polysilicon layer 111 is heavily doped during deposition with an N-typedopant. A CMP process is then used to planarize polysilicon layer 111down to silicon nitride layer 108. As a result, FIG. 22A shows contactholes 110 being filled with lightly P doped epitaxial silicon layer 112contacting P minus active region 102 and a N doped polysilicon plug 114positioned on top of epitaxial silicon layer 112.

[0118] Silicon wafer 95 is next heated to an elevated temperature, suchas by using an RTP process, sufficient to cause a portion of the N-typedopants in polysilicon plug 114 to diffuse into a top portion 115 ofepitaxial silicon layer 112. As such, a diode is formed having ajunction 123, defined by the interface between a top portion 115 and abottom portion 117 of epitaxial silicon layer 112. Top portion 115 isdefined by the area that is N doped by the ions diffused frompolysilicon plug 114. Bottom portion 117 is the remaining area ofepitaxial silicon layer 1 12. As a result of epitaxial silicon having asingle crystal structure, current leakage and resistance is minimized atjunction 123. Furthermore, since junction 123 is isolated within hole110, similarly constructed diodes can be formed closer together atincreased density without fear of shorting.

[0119]FIG. 23 is a cross-sectional view taken along the length of oneline of active regions 98. In the preferred embodiment, as shown in FIG.23 and the corresponding top view in FIG. 24, two adjacent holes 110 aresimultaneously formed within P minus active regions 102 according to theabove process. As such, two vertical diodes can simultaneously beformed. Likewise, after each polysilicon plug 114 is formed, aconventional masking and etching process can be used to form a hole 120in each of P plus active regions 100 on opposing sides of P minus activeregions 102. Holes 120 extend through silicon nitride layer 108 andoxide layer 104 and expose P plus active region 100. As shown in FIG.25, a polysilicon layer is then deposited over silicon wafer 95 so as tofill each of holes 120. The polysilicon layer is heavily doped duringdeposition with a P-type dopant. A CMP process is then used to removethe portion of the polysilicon layer above silicon nitride layer 108 sothat polysilicon plugs 122 are formed filling contact holes 120.

[0120] Once polysilicon plugs 122 are formed, a programmable resistor116 can be formed in contact with polysilicon plug 114 in the samemanner that programmable resistor 46 is formed in contact withpolysilicon plug 38 in FIG. 8. After programmable resistors 116 areformed, metal row lines 118 are formed that span between active regions98 to cover and contact aligned programmable resistors. Metal row lines118 are formed by initially depositing a metal layer over silicon wafer95 so as to cover programmable resistors 116. A layer of photoresist isnext deposited over the metal layer. A conventional masking and etchingprocess is used to remove the unwanted portion of the metal layer sothat only the metal row lines 118 connecting and covering programmableresistors 116 remain. The remaining photoresist material is thenremoved.

[0121] In FIG. 25A, a blanket oxide layer 124 is deposited over siliconwafer 95 so as to cover metal row lines 118. A CMP step is used toplanarize oxide layer 124 so that a smooth surface 126 is obtained. Toaccess polysilicon plugs 122, a layer of photoresist is deposited oversurface 126. Masking and etching steps are then used to form channels128 extending through oxide layer 124 and down to polysilicon plugs 122.Channel 128 has a diameter slightly larger than the diameter of contacthole 120 so that a portion of silicon nitride layer 108 is exposed.

[0122] A conductive material, such as any conventional metal, is nextdeposited in a blanket layer to fill channels 128 and interconnectpolysilicon plugs 122 on opposing sides of the vertical diodes. This ispreferably accomplished by depositing a titanium layer 130, or otherrefractory metal, by the process of sputtering so that a thin layer isformed on the interior surface of contact hole 120. Next, a layer 132 oftungsten is deposited by CVD methods so that a thin layer is depositedover layer 130. Layer 130 is composed of TiN, titanium, or both TiN andtitanium layer. A CMP step, or a etchback dry etch step, is then used toremove layer 130 and tungsten layer 132 that is not within contact hole120. Finally, a blanket layer of tungsten is deposited over siliconwafer 95 so as to fill the remaining area within channel 128, therebyproviding strapping over the vertical diodes.

[0123] The present invention also discloses other embodiments of lowseries resistance, vertical diodes that incorporate strapping. In onesuch embodiment, as shown in FIG. 26, vertical diodes are formed on asilicon wafer 137 by initially lightly implanting a P-type dopant in anN doped silicon substrate 138 to form an active region 136. Activeregion 136 comprises a digit line that is bounded on opposing sides byfield oxide 140.

[0124] As shown in FIG. 27, a polysilicon layer 142 is next deposited ina blanket layer over silicon wafer 137. Polysilicon layer 142 is heavilydoped by ion implantation with an N-type dopant. A photoresist layer 199is next deposited over polysilicon layer 142 and field oxide 140.Conventional masking and etching steps are then used to form holes 144through photoresist 142 that expose select portions of polysilicon layer142. P-type dopants are then implanted through holes 144 so as toheavily dope portions of polysilicon layer 142. As such, polysiliconlayer 142 is shown as having heavily N doped regions 146 and heavily Pdoped regions 148.

[0125] Once photoresist layer 199 has been removed, an additionalphotolithography step is used to selectively remove portions ofpolysilicon layer 142 so that a plurality of heavily N doped columns 150and heavily P doped columns 152, corresponding respectively to N dopedregions 146 and P doped regions 148, project from active region 136.Silicon wafer 137 is next heated to an elevated temperature, such as byan RTP step, so as to partially diffuse the dopant ions within columns150 and 152 into the active region 136, thereby forming infused regions154 below columns 150 and infused regions 155 below columns 152. As aresult, vertical diodes are formed that have a junction 153 at theinterface between silicon substrate 138 and infused regions 155.

[0126] As shown in FIG. 29, a blanket silicon oxide layer 156, i.e.,silicon monoxide or silicon dioxide, is next deposited over the siliconwafer 137 so as to cover columns 150 and 152. A photolithography processis used to etch channels 158 through silicon oxide layer 156 down toeach of the columns 150 and 152. A refractory metal silicide layer 160and a refractory metal nitride layer 161 are next formed on the interiorsurface of each of the channels 158. Refractory metal silicide layer 160is formed by initially depositing a refractory metal layer over siliconoxide layer 156 so that the interior surface of channels 158 are linedwith the refractory metal layer. Deposition of the refractory metallayer may be accomplished by sputtering, chemical vapor deposition, ormost other process by which metals are deposited. The refractory metallayer is preferably formed of titanium (Ti), however, other refractorymetals such as tungsten (W), tantalum (Ta), cobalt (Co), and molybdenum(Mo) can also be used.

[0127] Next, an RTP step is used to sinter the refractory metal layer.The sintering step is performed in a nitrogen (N2) rich environment at atemperature ranging from about 500° C. to about 650° C. The preferredexposure time ranges between about 10 seconds to about 20 seconds.

[0128] As a result of the sintering, the top or exposed portion of therefractory metal layer reacts with the surrounding nitrogen to formrefractory metal nitride layer 161, for example, TiN. In contrast theportion of the refractory metal layer adjacent to silicon oxide layer156 and columns 150 and 152, reacts with the polysilicon to formrefractory metal silicide layer 160. The composition of refractory metalsilicide layer 160 is dependent on the refractory metal used. Where Tiis used, refractory metal silicide layer 160 is TiSi2. Other silicidesthat can be formed include, by way of example, WSi2 TaSi2, CoSi2, andMoSi2.

[0129] A tungsten layer is next deposited in a blanket over siliconwafer 137 so as to fill the remaining portion of each of channels 158. ACMP process is next used to planarize the surface of the silicon waferdown to the oxide 156. As a result, each of channels 158 is filled witha tungsten plug 162 bounded by a refractory metal nitride layer 161 anda refractory metal silicide layer 160.

[0130] As shown in FIG. 30, a programmable resistor 164 can bepositioned in contact with each of the tungsten plugs 162 over the Nplus columns 150 in the same manner that programmable resistor 46 isformed in contact with polysilicon plug 38 in FIG. 8. A blanket metallayer can next be deposited over silicon wafer 137 and then patterned soas to form metal contact lines 166 contacting and covering programmableresistors 164.

[0131] A second blanket oxide layer 168 is next deposited so as to covermetal contact lines 166. The photolithography process is then used toform channels 170 through oxide layer 168 down to tungsten plugs 162above P plus columns 152. A refractory metal silicide layer 172,refractory metal nitride layer 174, and tungsten plug 176 are nextpositioned within each channel 170 in the same way that they arepositioned in channel 158. Finally, an aluminum line is deposited in ablanket layer over silicon wafer 137. A patterning step is then used toform contact line 178 that communicates with each of tungsten plugs 176.

[0132] In a further alternative embodiment, FIG. 31 depicts a siliconwafer 200 having similar features as the embodiment of FIG. 16, exceptthat a metal 60 such as platinum silicide is deposited over a dopedportion 252 of a polysilicon plug 38. FIG. 32 shows silicon wafer 200having a programmable resistor 46 and a metal contact 48 overpolysilicon plug 38, similar to the embodiment of FIG. 17.

[0133] The present invention may be embodied in other specific formswithout departing from its spirit or essential characteristics. Thedescribed embodiments are to be considered in all respects only asillustrative and not restrictive. The scope of the invention is,therefore, indicated by the appended claims rather than by the foregoingdescription. All changes which come within the meaning and range ofequivalency of the claims are to be embraced within their scope.

[0134] What is claimed and desired to be secured by United StatesLetters Patent is:

What is claimed is:
 1. A method for forming a diode on a silicon wafer,the method comprising: forming an active region in the silicon wafer;forming a first metal silicide layer over said active region; forming alayer of insulating material over said first refractory metal silicidelayer; etching a diode opening through said layer of insulating materialto expose a portion of said first refractory metal silicide layer,wherein said diode opening has an interior surface; forming a secondrefractory metal silicide layer over said interior surface of said diodeopening; forming a doped polysilicon plug within said diode opening;incorporating a platinum silicide layer into said plug, wherein saidplatinum silicide layer does not contact said second refractory metalsilicide layer; forming an insulative silicon layer on said layer ofinsulation material and over said diode opening; opening a passagewaythrough said insulative silicon layer, such that said passageway extendsto said platinum silicide layer; forming a layer of chalcogenidematerial over said insulative silicon layer and within said passageway,wherein said forming a layer of chalcogenide material is performed atleast to an extent such that said chalcogenide material contacts saidplatinum silicide layer; forming a layer of titanium nitride over saidchalcogenide material; and providing said layer of titanium nitride witha metal contact.
 2. A method as recited in claim 1, wherein saidinsulative silicon layer comprises silicon nitride.
 3. A method asrecited in claim 1, wherein said insulative silicon layer comprisessilicon dioxide.
 4. A method as recited in claim 1, wherein said openinga passageway comprises etching through said insulative silicon layer. 5.A method as recited in claim 1, further comprising doping with a firsttype dopant the silicon wafer.
 6. A method as recited in claim 1,wherein the silicon wafer has an exposed surface and said forming anactive region comprises doping at least a portion of said exposedsurface of the silicon wafer with a second type dopant.
 7. A method asrecited in claim 1, wherein forming a doped polysilicon plug comprises:filling said diode opening with doped amorphous silicon; and convertingsaid doped amorphous silicon to polysilicon.
 8. A method as recited inclaim 7, wherein said polysilicon comprises large grain polysilicon. 9.A method as recited in claim 7, wherein filling said diode opening withdoped amorphous silicon comprises: filling said diode opening withamorphous silicon; and doping said amorphous silicon with a second typedopant.
 10. A method as recited in claim 1, wherein the silicon waferhas an exposed surface, and further comprising: doping with a first typedopant the silicon wafer; doping at least a portion of said exposedsurface of the silicon wafer with a second type dopant to form an activeregion; filling said diode opening with doped amorphous silicon, whereinsaid doped amorphous silicon comprises the second type dopant; andconverting said doped amorphous silicon to polysilicon.
 11. A method asrecited in claim 10, wherein said polysilicon comprises large grainpolysilicon.
 12. A method as recited in claim 10, wherein said secondtype dopant provides a conductivity opposite to the conductivityprovided by said first type dopant.
 13. A method as recited in claim 10,wherein said first type dopant comprises a P-type dopant.
 14. A methodas recited in claim 10, wherein said second type dopant comprises anN-type dopant.
 15. A method as recited in claim 1, wherein said forminga second refractory metal silicide layer comprises: forming apolysilicon layer on said layer of insulation material and on saidinterior surface of said diode opening; forming a refractory metal layerover said polysilicon layer; and chemically reacting at least a portionof said refractory metal layer with at least a portion of saidpolysilicon layer to form a second refractory metal silicide layer insaid interior surface of said diode opening.
 16. A method for forming adiode on a silicon wafer, the silicon wafer having an exposed surfaceand being doped with a first type dopant, the method comprising: highlydoping a portion of the exposed surface of the silicon wafer with asecond type dopant to form an active region; disposing a firstrefractory metal silicide layer over said active region; forming a layerof insulation material over said first refractory metal silicide layer;etching a diode opening through said layer of insulation material toexpose a portion of said first refractory metal silicide layer, whereinsaid diode opening has an interior surface; disposing a secondrefractory metal silicide layer over said interior surface of said diodeopening; filling said diode opening with amorphous silicon; lightlydoping said amorphous silicon with said second type of dopant; heatingsaid amorphous silicon to convert said amorphous silicon to large grainpolysilicon; applying a platinum silicide layer to said silicon plug soas to not contact said second refractory metal silicide layer;positioning an insulative silicon layer on said layer of insulationmaterial and over said diode opening; etching a passageway through saidinsulative silicon layer and down to said platinum silicide layer;placing a layer of chalcogenide material over said insulative siliconlayer and within said passageway so as to contact said platinum silicidelayer; locating a layer of titanium nitride over said chalcogenidematerial; and securing a metal contact onto said layer of titaniumnitride.
 17. A method for forming a diode as recited in claim 16,wherein said disposing a second refractory metal silicide layercomprises: covering said layer of insulation material and said interiorsurface of said diode opening with a polysilicon layer; applying arefractory metal layer over said polysilicon layer; and exposing saidrefractory metal layer to a temperature sufficient to chemically reactsaid polysilicon layer with said refractory metal layer to form a secondrefractory metal silicide layer positioned over said layer of insulationmaterial and on said interior surface of said diode opening.
 18. Amethod as recited in claim 16, wherein said second type dopant providesa conductivity opposite to the conductivity provided by said first typedopant.
 19. A method as recited in claim 16, wherein said first typedopant comprises a P-type dopant.
 20. A method as recited in claim 16,wherein said second type dopant comprises an N-type dopant.